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Transistors
2SA2021
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SC5609 I Features
* High foward current transfer ratio hFE * SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
0.33+0.05 -0.02 3
0.10+0.05 -0.02
(0.40) (0.40) 0.800.05 1.200.05 5
0.15 min.
0.23+0.05 -0.02
1
2
I Absolute Maximum Ratings Ta = 25C
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg -60 -50 -7 -200 -100 100 125 -55 to +125 V V V mA mA mW C C
0 to 0.01
Parameter
Symbol
Rating
Unit
1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin)
Marking Symbol: 3E
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Collector output capacitance Transition frequency VCBO VCEO VEBO hFE VCE(sat) Cob fT Conditions VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 IC = -10 A, IE = 0 IC = -100 A, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 1 mA, f = 200 MHz -60 -50 -7 180 - 0.3 2.7 80 390 - 0.5 V pF MHz Min Typ Max - 0.1 -100 Unit A A V V V
0.520.03
5
0.15 min.
0.800.05
1.200.05
1
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2001 MAR

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